Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode

4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was synthesized according to the literature and HOMO LUMO energies of were calculated by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W. Au/BOD-Pyr/n-Si/In Schottky diode fabricated thermal evaporation spin coating technique. The electronic photovoltaic properties have been investigated current-voltage (I-V) measurements at dark under various illumination intensities. ideality factor barrier height in found be 2.84 0.75 eV, respectively. These parameters also obtained 100 mW/cm2 level as 1.55 0.87 values open-circuit voltage short circuit current density 0.26 V 0.56 mA/cm2 mW/cm2. all findings suggest that can used photodiode optoelectronic applications.